代表性学术成果： 1．Xue Chen, Ruokai Wu, Jiaxian Wan, Hongwei Wu, Hao Wu , Chang Liu，Rational selection of the oxygen source for atomic layer deposition Al2O3 insulators，Vacuum, 215(2023) 112315. （Q2, IF=4.11） 2. Xue Chen, Jiaxian Wan, Liwei Ji, Juan Gao, Hao Wu*, Chang Liu*, Influence of precursor purge time on the performance of ZnO TFTs fabricated by atomic layer deposition, Vacuum, 200 (2022) 111022. (Q2, IF=4.11) 3. Xue Chen, Jiaxian Wan, Hao Wu*, Chang Liu*, Enhanced Negative Bias Illumination Stability of ZnO Thin Film Transistors by Using a Two-Step Oxidation Method, IEEE Transactions on Electron Devices, 69 (2022) 2404- 2408. (Q2, IF= 3.221) 4. Xue Chen, Jiaxian Wan, Hao Wu*, Chang Liu*, Effective Encapsulation of ZnO Thin Film Transistors Controlled by Thermal Energy, Applied Surface Science, 548(2021) 149253. (Q1, IF=6.182) 5. Xue Chen, LiWei Ji, Jiaxian Wan, Hao Wu*, Chang Liu*, ZnO Bilayer Thin Film Transistors Using H2O and O3 as Oxidants by Atomic Layer Deposition, Acta Materialia, 185(2020) 204-210. (Q1, IF=7.656) 6. Xue Chen, Guozhen Zhang, Jiaxian Wan, Tao Guo, Lei Li, Yanpeng Yang, Hao Wu*, Chang Liu*, Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition, Advanced Electronic Materials, 5(2019) 1800583. (Q2, IF=6.312) |
